Magnetic stray fields in nanoscale magnetic tunnel junctions
نویسندگان
چکیده
منابع مشابه
Magnetic Tunnel Junctions
Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...
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Figure 1 Schematic illustration showing the mechanism of TMR. Top: for parallel aligned magnetization as sketched at left, electrons around the Fermi level with spin up (m) and spin down (k) are allowed to tunnel from majority to majority bands, and from minority to minority bands. Bottom: when the magnetization is antiparallel, tunneling takes place from majority to minority and minority to ma...
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When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process. Here we present data on the stability of MTJ against small fields which occur during ...
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Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni80Fe20 /Cu/Co trilayer films in the presence of ...
متن کاملLow-frequency magnetic and resistance noise in magnetic tunnel junctions
We have studied the voltage fluctuations of current-biased, micron-scale magnetic tunnel junctions. We find that the spectral power density is 1/f -like at low frequencies and becomes frequency independent at high frequencies. The frequency-independent background noise is due to Johnson-Nyquist noise and shot noise mechanisms. The nature of the 1/f noise has its origin in two different mechanis...
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ژورنال
عنوان ژورنال: Journal of Physics D: Applied Physics
سال: 2019
ISSN: 0022-3727,1361-6463
DOI: 10.1088/1361-6463/ab4fbf